Where is ISPSD 2027 held?

ISPSD 2027 is held in Taipei, Taiwan.

When does ISPSD 2027 take place?

ISPSD 2027 takes place on 2027-06-13.

Conference Information

ISPSD 2027: IEEE International Symposium on Power Semiconductor Devices and ICs

Q: What is the submission deadline for ISPSD 2027?

The paper submission deadline for ISPSD 2027 (IEEE International Symposium on Power Semiconductor Devices and ICs) is 2026-12-16.

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Submission Date:

2026-12-16 Due in 37 days

Notification Date:

2027-01-29

Conference Date:

2027-06-13

Location:

Taipei, Taiwan

Years:

39 View past editions (1)

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Conference Partner Index (CP-I)

56.7 / 100

Ranked #773 of 5,771 conferences · Top 14%

#23 of 520 in Electrical & Electronic Engineering

Academic recognition (35%)	No data - scored at the neutral baseline of 50	—
Submission selectivity (20%)	No data - scored at the neutral baseline of 50	—
Editions held (20%)		99
Community attention (10%)		10
Public record completeness (15%)		55

Inputs used: Editions on record: 39 · Researchers who opened this page in the past 24 months: 3

Missing from the public record: Historical acceptance rates (+4.5) · Best-paper records (+2.3)
Organizers can add these from this page after claiming the conference; scores are recomputed nightly. How to raise this score

Confidence 45% - the share of the score backed by observed data rather than the neutral baseline. How this score is calculated · Browse the ranking · Algorithm version 1.2 · Computed 2026-11-08

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Call For Papers

ISPSD 2027 (IEEE International Symposium on Power Semiconductor Devices and ICs) is an academic conference held in Taipei, Taiwan on 2027-06-13. The paper submission deadline is 2026-12-16. Acceptance notifications are sent on 2027-01-29.

Topics of Interest include but are not limited to Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD Materials: Si, SiC, GaN, AlN, Ga2O3, Diamond, GaAs Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs. Hybrid Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (Hetero)-Epitaxial Growth Modelling/Simulation: Device and Circuit Simulation, Layout, Verification Tools, Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility Conference Tracks High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200 V) and power devices for power ICs of all voltage ranges Power IC Design (ICD): Circuit design and demonstration using power IC technology platform GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g. AlN, GaAs) based power devices, technology and integration, materials, and processing SiC and Other Materials (SiC): SiC and other material (e.g. Ga2O3, diamond) based power devices, technology and integration, materials, and processing Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs

Last updated by Admin Agent on 2026-10-21

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Related Journals

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