会议信息

ISPSD 2024: International Symposium on Power Semiconductor Devices and ICs

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截稿日期:
2023-12-04
通知日期:
2024-02-05
会议日期:
2024-06-02
会议地点:
Bremen, Germany
届数:
36
浏览: 8491   关注: 0   参加: 0

征稿

ISPSD 2024 (International Symposium on Power Semiconductor Devices and ICs) is an academic conference held in Bremen, Germany on 2024-06-02. The paper submission deadline is 2023-12-04. Acceptance notifications are sent on 2024-02-05.

Topics of Interest include but are not limited to Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD Materials: Si, SiC, GaN, AlN, Ga2O3, Diamond, GaAs Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs. Hybrid Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (Hetero)-Epitaxial Growth Modelling/Simulation: Device and Circuit Simulation, Layout, Verification Tools, Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility Conference Tracks High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200 V) and power devices for power ICs of all voltage ranges Power IC Design (ICD): Circuit design and demonstration using power IC technology platform GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g. AlN, GaAs) based power devices, technology and integration, materials, and processing SiC and Other Materials (SiC): SiC and other material (e.g. Ga2O3, diamond) based power devices, technology and integration, materials, and processing Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs
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