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IIRW 2026: IEEE International Integrated Reliability Workshop

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截稿日期:
2026-09-04
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会议日期:
2026-10-04
会议地点:
South Lake Tahoe, California, USA
届数:
浏览: 14715   关注: 0   参加: 0

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征稿

IIRW 2026 (IEEE International Integrated Reliability Workshop) is an academic conference held in South Lake Tahoe, California, USA on 2026-10-04. The paper submission deadline is 2026-09-04.

Scope IIRW 2026 welcomes abstracts on, but not limited to, these topics: Special Focus Areas: Power Electronic Reliability (SiC, GaN, PMICs) Circuit and Systems Reliability (telemetry, SoC) Heterogeneous Integration/3DIC (TSV and stacking package) Device-Level Reliability FET, FinFET, SOI, III-V, SiGe reliability (HCI, BTI, TDDB, RTN, etc.) FEOL/MOL/BEOL dielectrics (high-k, SiO2, SiON, low-k) RF and mm/sub-mm Wave devices and circuits reliability Reliability Characterization & Testing Wafer-level reliability tests for monitoring and qualification Plasma-induced damage (PID), electrostatic discharge (ESD), Failure analysis Modeling and simulation for reliability, including self-heating Process integration and advanced packaging reliability Circuit, System, and Application-Level Reliability Design-in-reliability (products, circuits, systems, processes) Reliability of advanced automotive circuits, systems, products Customer/manufacturer product reliability requirements Memory Reliability Conventional and emerging memories: Flash, DRAM, SRAM Emerging non-volatile memories: RRAM, PCM, FeFETs, ferroelectric capacitors Reliability and physics of memory switching, cycling endurance, retention, and variability Memory-centric aging mechanisms and failure modes Reliability in memory-based computing architecture
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