Functional Materials for (Opto)electronics, Sensors, Detectors, and Green Energy.

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications, and theoretical studies of functional semiconductor materials and devices. Each issue aims to provide a snapshot of current insights, new achievements, breakthroughs, perspectives, and future trends in material sciences for such diverse fields as advanced electronics and opto-electronics, sensors and detectors, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film deposition and growth technology, hybrid and quantum materials, device fabrication technology, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography, etching, doping, annealing, and thin film processing for submicron and nano devices; material and device failure, reliability, damage evolution, and related issues; advanced chemical and physical vapor deposition; advanced metallization and interconnect schemes; compound semiconductor materials and processing; new dielectrics and non-oxide materials and their applications; (macro)molecular, hybrid, heterostructure, and quantum materials, devices, and processing; molecular dynamics, ab-initio methods, Monte Carlo simulations, data intensive and machine-learning based approaches, etc.; new materials and processes for discrete and integrated circuits; advanced electronic packaging materials and processes; magnetic materials and spintronics; crystal growth technology and mechanism; intrinsic impurities and defects of materials. Pure device simulation and modelling without connection to experiment is not within the aim and scope of this journal.

Special Issue on Packaging, Integration, and Reliability of Wide-Bandgap Semiconductor Power Devices
截稿日期: 2025-11-30

For power electronic systems, power semiconductor devices—constructed through packaging and integrating semiconductor chips—serve as the core components. Therefore, the development of high-performance power electronic devices is regarded as the fundamental driver for advancing energy transition. In recent years, third-generation semiconductors, particularly SiC and GaN, have achieved rapid progress. WBG devices exhibit inherent advantages over traditional silicon-based counterparts, including higher operating frequencies, enhanced voltage tolerance, superior efficiency, and improved high-temperature stability. However, existing packaging technologies, which largely retain legacy approaches from silicon-based power electronics, introduce excessive parasitic inductance and suffer from inadequate thermal management. These limitations prevent WBG power devices from fully utilizing their inherent advantages, creating a critical technical bottleneck that hinders industrial advancement. Furthermore, the ultra-fast switching characteristics of WBG devices necessitate the re-examination of parasitic parameters that were previously negligible in silicon-based devices. This demands innovations in theoretical modeling combined with refinement of failure mechanisms and reliability optimization frameworks. Consequently, addressing these technical challenges—ranging from fundamental theories to large-scale applications—requires clarifying the intrinsic evolution patterns of WBG devices and developing novel theories, methodologies, and technologies for application-specific modeling and reliability enhancement. These efforts to improve the performance and reliability of WBG power semiconductor devices have become the primary focus for global researchers, scholars, and engineers.

Scope of this Special Issue includes:

1) WBG Device Packaging
2) Reliability Design of WBG Devices
3) Integrated Technology of WBG Devices
4) Driving and Protection of WBG Devices
5) Life prediction of WBG Devices
6) Application of WBG Devices

Guest editors:

Yunhui Mei, Tiangong University, Tianjin, China
Puqi Ning, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China
Chuantong Chen, The University of Osaka, Suita, Japan
Yuhao Zhang, The University of Hong Kong, Hong Kong, China
Xuebo Li, North China Electric Power University, Beijing, China

Manuscript submission information:

Submission Deadline: 30 November 2025

Submission Site: Editorial Manager®

Article Type Name: "VSI: WBG Device Packaging " - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact Leading Guest Editor.

For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

    Materials
    Integration
    Reliability
    Design
    High Density
    Characterizations
    Gate Driving

Special Issue on Defects in Semiconductors for Quantum Information Quantum defects
截稿日期: 2026-01-31

Point defects in semiconductor materials, such as the NV center in diamond, are vital components for achieving quantum information technologies such as quantum communication and metrology. These defects, sometimes termed “quantum defects”, combine the environmental isolation necessary for coherence together with the possibility of manipulation of their behavior via electrical or optical means. This Special Issue seeks submissions focused on the development and discovery of novel quantum defects, as well as contributions centered on advances in the understanding of advanced defect centers. All aspects of quantum defects are relevant for this Special Issue, including electronic, vibrational, optical, and magnetic properties.

Guest editors:

Dr. John L. Lyons, U.S. Naval Research Laboratory, Washington, D.C., United States
Dr. Mark Turiansky, UC Santa Barbara College of Engineering, Santa Barbara, United States

Manuscript submission information:
Submission Due: 31 January 2026
Submission Site: Editorial Manager®
Article Type Name: "Quantum defects" - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact Leading Guest Editor.
Guide for Authors will be helpful for your future contributions, read more: Guide for Authors.
For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

    Defects
    Semiconductors
    Quantum information science

Special Issue on Nitride and Related Materials for Electronic and Optoelectronic Applications
截稿日期: 2026-01-31

Guest editors:

Prof. Hieu Nguyen
Texas Tech University, Department of Electrical and Computer Engineering, 910 Boston Avenue, Lubbock, Texas, 79410, USA
Email: hieu.p.nguyen@ttu.edu 
Areas of Expertise:  III-nitride; optoelectronics; light-emitters; molecular beam epitaxy

Prof. Sharif Sadaf
Institut National de la Recherche Scientifique (INRS)-Université du Québec, 490 Couronne St, Québec City, Quebec G1K 9A9, Canada
Area(s) of Expertise : III-nitride; quantum photonics; nanostructures ; light-emitting diodes

Prof. Yong-Ho Ra
Jeonbuk National University, Division of Advanced Materials Engineering, 567 Baekje-daero, Deokjin-gu, Jeonju, 54896, South Korea
Area(s) of Expertise: III-nitride; MOCVD; laser diodes; photonics crystal ; displays

Prof. Taewoo Kim
Texas Tech University, Department of Electrical and Computer Engineering, 910 Boston Avenue, Lubbock, Texas 79410, USA
Area(s) of Expertise : III-V; nanoelectronics; transistors; HEMT; RF

Special issue information:

Nitride and related semiconductors have been intensively developed due to their unique electronic, optical, and chemical properties, enabling high performance devices for emerging electronic and optoelectronic applications. This special issue aims to highlight recent achievements in the fields of electronic and optoelectronic devices using nitride semiconductors. Potential topics include, but are not limited to material development, device fabrication and integration, characterization, and applications of nitride semiconductors including both thin-film and nanostructures; nitride based high electron mobility transistors, field effect transistors, memory devices, light-emitting diodes, laser diodes, photodetectors, and solar cells; photochemical water splitting and hydrogen generation; and photoelectrochemical CO2 reduction.

Manuscript submission information:

Submission Open Date: Nov 1, 2024
Manuscript Submission Deadline: January 31, 2025

You are invited to submit your manuscript at any time before the submission deadline. For any inquiries about the appropriateness of contribution topics, please contact the guest editors. 

The journal’s submission platform (Editorial Manager®) will be available for receiving submissions to this Special Issue on or before Nov 1, 2024. Please refer to the Guide for Authors to prepare your manuscript, and select the article type “VSI: Nitride-Optoelectronics” when submitting your manuscript online. Both the Guide for Authors and the submission site can be found on the Journal Homepage.  

All the submissions deemed suitable to be reviewed in accordance with journal standards. Upon its editorial acceptance, your article will go into production immediately. It will be published in the latest regular issue, while being presented on the specific Special Issue webpage simultaneously. In regular issues, Special Issue articles will be clearly marked and branded.

Keywords:

III-nitride; transistors; light-emitters; sensors; solar cells; solar-fuel cells

Special Issue on Control of Semiconductor Interfaces and Group-IV Semiconductor Engineering Technologies (ISCSI-X & ICSI/ISTDM 2025)
截稿日期: 2026-03-31

The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) is held in Yokohama, Japan, from November 10-13, 2025, aiming for global collaboration dedicated to semiconductor interfaces and group-IV semiconductor engineering technologies. Please submit papers related to ISCSI-X & ICSI/ISTDM 2025. Submission of papers, which are not presented at ISCSI-X & ICSI/ISTDM 2025, is also welcome.

Guest editors:

Taizoh Sadoh, Kyushu University, Fukuoka, Japan
Katsunori Makihara, Nagoya University, Nagoya, Japan
Tatsuro Maeda, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Koji Kita, The University of Tokyo, Tokyo, Japan
Tetsuya Yamamoto, Kochi University of Technology, Kami, Japan

Special issue information:

The 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) is held in Yokohama, Japan, from November 10-13, 2025, aiming for global collaboration dedicated to semiconductor interfaces and group-IV semiconductor engineering technologies. Please submit papers related to ISCSI-X & ICSI/ISTDM 2025. Submission of papers, which are not presented at ISCSI-X & ICSI/ISTDM 2025, is also welcome.

1. Thin Film Growth and Characterization
- Si, Strained Si, Ge, SiGe(C), GeSn, SiC, Diamond, Silicide, Compound semiconductors, III-nitrides, Oxide semiconductors,
- High-k insulator, Low-k insulator
- Epitaxial growth, CVD, MBE, Selective epitaxy, Atomic layer control, Novel growth technique
- Band engineering, Defect engineering, Theory and Simulation, and modeling

2. Surface and Interface Control
- Surface passivation and modification, Surface and interface chemistry
- Schottky and ohmic contacts
- Atomic scale characterization of surfaces and interfaces
- Surface/interface issues in advanced devices

3. Formation and Characterization of Nanostructures
- Nanodots, Nanowires, Superlattice, Self-assembling, Self-organization
- Synthesis of low-dimensional materials (2D materials etc.)
- Nanoscale characterization, In-situ characterization, Epitaxy equipment technology, Metrology challenges

4. Process and Device Technology
- Impurity diffusion, Dry etching, Microfabrication, Isolation, Heterostructure devices combined with 2D materials, SiGe gate, Source/drain and channel engineering, Base/emitter engineering
- SOI, SGOI, III-V on Si, Wafer bonding, Virtual substrates and their Manufacturing
- CMOS, HBT, BiCMOS, FeRAM, MODFET, SET, RTD, LED, LD, OEIC
- Advanced thermal processing, Source/drain & channel engineering, Base/emitter engineering, Fin FET/GAAFET, Semiconductor-superconductor integration, Photonic devices, Quantum technology

Manuscript submission information:

Submission Deadline: 31 March 2026

Submission Site: Editorial Manager®

Article Type Name: "VSI: ISCSI & ICSI/ISTDM" - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact Leading Guest Editor.

For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

    interface
    surface
    semiconductor
    insulator
    thin film
    nanostructure

Special Issue on Advanced Electronic Packaging and Heterogenous Integration for Future Artificial Intelligence Applications
截稿日期: 2026-11-01

Guest editors:

Chong Leong Gan, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Min-Hua Chung, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Chen-Yu Huang, Micron Memory Taiwan Co. Ltd., Taichung, Taiwan
Hong Wan Ng, Micron Semiconductor Asia, Singapore
Kuan-Neng Chen, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Special issue information:

This special issue aims to provide a platform for both academic and industrial researchers to share their most recent works on the development of semiconductor device processing technologies, heterogenous integration technical challenges and mitigation strategies. Novel and forefront research studies on semiconductor packaging, simulation and modelling, materials innovations as well as testing methodologies to resolve key fabrication and packaging failures are crucial in enabling the next decades of semiconductor advancements for future AI applications.

This special issue collects regular and review papers on but not limited to the subjects below.

1. Chip to packaging interactions (CPI), package to silicon integration and study
2. Heterogenous integration in memory and semiconductor devices
3. Materials innovations and characterizations in advanced semiconductor packaging
4. Advanced 3D packaging technologies such as Cu-Cu bonding, hybrid bonding, CuSn bonding technologies in HBM (High Bandwidth Memory) and CoWoS (Chip-on-wafer on Substrate) packaging
5. Quality and reliability assessment in advanced 2.5D and 3D packaging
6. Advanced semiconductor testing methodologies, testing hardware and strategies
7. Novel materials and testing methods for future high performance computing such HBM (High Bandwidth memory), Cryogenic memory applications.8. Packaging process improvements, wafer level integration process challenges, yield mitigations and enhancements
9. Mechanical, thermal and process simulation and modeling in advanced packaging technologies
10. Digital twins and applications in advanced packaging

Manuscript submission information:

Submission Deadline: 1 November 2026

Submission Site: Editorial Manager®

Article Type Name: "VSI: Advanced Packaging" - please select this item when you submit manuscripts online.

All manuscripts will be peer-reviewed. Submissions will be evaluated based on originality, significance, technical quality, and clarity. Once accepted, articles will be posted online immediately and published in a journal regular issue within weeks. Articles will also be simultaneously collected in the online special issue.

For any inquiries about the appropriateness of contribution topics, welcome to contact the Leading Guest Editor.

For more information about our Journal, please visit our ScienceDirect Page: Materials Science in Semiconductor Processing.

Keywords:

3D Memory device packaging, High Bandwidth Memory Packaging, Heterogeneous Integration, Materials Innovations and Memory reliability, Materials Innovation