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IITC 2024: IEEE International Interconnect Technology Conference

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IITC
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截稿日期:
2024-02-12
通知日期:
会议日期:
2024-06-03
会议地点:
San Jose, California, USA
届数:
27
浏览: 19592   关注: 0   参加: 0

会伴指数 (CP-I)

50.2 / 100
全站第 1,523 名 / 共 5,682 个会议 · 前 27%
学术认可 (35%) 无数据 —— 按中性基准 50 分计入 —
投稿选择性 (20%) 无数据 —— 按中性基准 50 分计入 —
会议传承 (20%)
90
社区关注 (10%)
10
资料公开度 (15%)
25

用到的输入: 有据可查的届次：27 · 过去 24 个月打开过本页的研究者：3 人

公开资料里还缺: 历年录用率 (+4.5) · 历届信息 (+3.0) · 最佳论文记录 (+2.3)
主办方认领本会议后，可直接在这一页补上；分数每晚重算。如何提升这个分数

置信度 45% —— 分数中有多大比例来自实际观测到的数据，而不是中性基准。 这个分数是怎么算出来的 · 查看完整榜单 · 算法版本 1.1 · 算于 2026-09-18

征稿

IITC 2024 (IEEE International Interconnect Technology Conference) is an academic conference held in San Jose, California, USA on 2024-06-03. The paper submission deadline is 2024-02-12.

The 27th edition of the International Interconnect Technology Conference (IITC) will be held June 3-6, 2024 in San Jose, California. Authors are encouraged to submit their original work describing innovative research and development in the critically important field of on-chip interconnects. The conference seeks papers on all aspects of BEOL/MOL interconnects and metallization, including design, unit process, integration and reliability. The deadline for submission of abstracts is February 12, 2024. IITC is sponsored by the IEEE Electron Devices Society as the premier conference for interconnect technology devoted to leading-edge research in the field of advanced metallization and 3D integration for ULSI IC applications. The conference seeks papers on all aspects of BEOL/MOL interconnects and metallization, including design, unit process, integration and reliability. Applications of Interest Advanced interconnects: low-k interconnects, optical, wireless, and carbon-based interconnects, Airgap, 1D/2D interconnects, beyond Cu… Emerging BEOL Integration flows such as semi-damascene 3D integration & packaging concerns: Wafer-to-Wafer/Chip-to-Wafer bonding, RDL’s and Interposers, Through Si Via, Non-destructive, high throughput methods to identify defects, backside power distribution network (BSPDN), thermal management Contacts on MOS devices: Silicide, III-V, 2D materials… Memory architecture: CBRAM, PCRAM, ReRAM, MRAM, FeRAM, DRAM, 3DNAND… Novel System and Emerging Technology: Energy harvesting, brain-inspired computing… Novel Form Factors: flexible electronics, wearables… Topics of Interest Process integration, advanced patterning for MOL/BEOL Materials and Unit Processes (Dielectrics, metals, barriers, Wet, CMP, PVD, CVD, ALD, selective deposition/SAMs, patterning, advanced cleaning and surface treatment) Reliability and Failure analysis, characterization, techniques, and methods Advanced material/process characterization, system-technology & design-technology co-optimization, and modelling techniques Abstract Information Abstracts must be no more than 3 pages in length. Details of abstract submission, including a template will be available shortly when the submission site is available. Submissions will be reviewed for acceptance as an oral presentation or poster. Accepted abstracts will be published digitally by IEEE as IITC Conference Proceedings without further changes.
由 Dou Sun 最后更新于

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