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Journal of Crystal Growth

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Factor de Impacto:
2.5
Editor:
Elsevier
ISSN:
0022-0248
Vistas:
39
Seguidores:
0

Solicitud de Artículos

Journal of Crystal Growth is an academic journal published by Elsevier. (ISSN 0022-0248, impact factor 2.5).

Aims & Scope The Journal of Crystal Growth offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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Special Issues

Special Issue on Modeling and machine learning of Crystal Growth Processes and Devices Día de Entrega: 2026-07-15 This Special Issue is associated with a series of international scientific events supported by the International Organization for Crystal Growth (IOCG), the Indian Association for Crystal Growth, and organized in association with Nagoya University, Japan. It brings together contributions from the 4th International Symposium on Modeling of Crystal Growth Processes and Devices (MCGPD-2026) and the 3rd Indo-Japan Workshop on Machine Learning for Crystal Growth (MLCG-2026), held during 16–18 February 2026, followed by the 3rd Indo-Japan Joint Workshop on Photovoltaics (IJPV-2026) on 19 February 2026 at SSN Institutions, Chennai, India. The issue highlights advances in crystal growth modeling, machine-learning-driven materials design, and photovoltaic materials and devices. The Special Issue aims to provide a platform for interdisciplinary research spanning crystal growth theory, computational and data-driven approaches, advanced characterization, and emerging energy applications, fostering collaboration between academia and industry across international boundaries. Guest editors: Prof. Koichi Kakimoto Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan Prof. Daniel Vizman Faculty of Physics, West University of Timisoara, Bd. V. Parvan 4, 300223-Timisoara, Timișoara, Romania Dr. Simon Brandon Department of Physics, Sri Sivasubramaniya Nadar College of Engineering, Kalavakkam, Chennai, Tamilnadu, India Manuscript submission information: Manuscript submission deadline: 15-Jul-2026 You are invited to submit your manuscript at any time before the submission deadline. For any inquiries about the appropriateness of contribution topics, please contact Prof. Koichi Kakimoto via [email protected]. Please refer to the Guide for Authors to prepare your manuscript, and select the article type of “VSI: MCGPD-2026 & MLCG-2026” when submitting your manuscript online at the journal’s submission platform Editorial Manager®. Both the Guide for Authors and the submission portal could also be found on the Journal Homepage. Keywords: Crystal growth, Modeling of crystal growth processes, Machine learning for crystal growth, Data-driven materials design, Computational materials science, Phonon transport and thermal properties, Energy materials and applications, Advanced characterization https://www.sciencedirect.com/special-issue/331817/modeling-and-machine-learning-of-crystal-growth-processes-and-devices
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Special Issue on Proceedings of ICMOVPE XXII Día de Entrega: 2026-08-31 This Special Issue of the Journal of Crystal Growth is dedicated to the 22nd International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXII), held from July 12–17, 2026, on Jeju Island, Korea. Since its inception in 1981, ICMOVPE has served as a premier global forum for advancing the science and technology of epitaxy. This collection features cutting-edge research and innovative concepts spanning both fundamental and applied aspects of MOVPE. The covered topics include Growth Studies, III–V Materials, Oxides and Dielectrics, Atomic Layer Deposition, Etching, and related epitaxial growth technologies. This issue aims to highlight recent achievements and promote continued collaboration between academia and industry. Guest editors: Prof. Sang-Wan Ryu Department of Physics, Chonnam National University, Buk-gu, Korea, Republic of Prof. Jung Han Department of Electrical and Computer Engineering, Yale University, New Haven, Connecticut, United States Prof. Dr. Michael Kneissl Institute for Physics & Astronomy, TU Berlin University, Berlin, Germany Prof. Seokho Moon Department of Materials Science and Engineering, Ajou University, Suwon-si, Korea, Republic of Special issue information: This Special Issue of the Journal of Crystal Growth is dedicated to the 22nd International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXII), held July 12–17, 2026, at ICC Jeju, Korea. Since its inception in 1981, ICMOVPE has served as the premier global forum for epitaxial growth science and technology. This issue captures the scientific highlights of the conference, spanning fundamental growth science to cutting-edge device applications across the broad material systems accessible by MOVPE/MOCVD. I. Fundamental Growth Science and Process Technology Contributions addressing the fundamentals of MOVPE epitaxial processes are central, including growth modeling and simulation, in-situ monitoring, reactor design, patterned and selective area growth, atomic layer deposition (ALD) and etching, and nanoscale characterization. Equipment innovation, safety, and low-cost production approaches are also within scope.​ II. III-V, III-N, and Related Semiconductor Materials and Devices This category encompasses nitride semiconductors (GaN, AlN, InGaN, and alloys) and arsenide/phosphide-based III-V compounds, along with II-VI (CdTe, ZnSe) and IV-IV (SiC, SiGe, GeSn) material systems. Low-dimensional structures (quantum dots, wires, and wells) within these families are included. Device topics span micro-LEDs for next-generation displays, DUV LEDs, laser diodes, photodetectors, and high-electron-mobility transistors (HEMTs) for power and RF electronics. III. Oxides and Dielectrics Research on wide- and ultra-wide-bandgap oxides — including Ga₂O₃ and transparent conducting oxides (TCOs) — as well as dielectric thin films deposited by MOVPE or ALD, is featured in the context of power switching devices, UV photodetectors, and gate dielectric engineering. IV. 2D Materials and van der Waals Heterostructures MOCVD-based synthesis of two-dimensional materials is a rapidly growing frontier of this conference. This includes hexagonal boron nitride (hBN) for quantum photonics, DUV optoelectronics, and neuromorphic applications, and transition metal dichalcogenides (TMDs: MoS₂, WS₂, WSe₂, etc.) for electronic and optoelectronic devices. Van der Waals heterostructures — 2D/2D and 2D/3D heterojunctions and twisted moiré superlattice systems — are highlighted as emerging platforms for next-generation quantum and semiconductor devices. V. Advanced Epitaxy and Heterogeneous Integration Emerging growth paradigms — including remote epitaxy, quasi-van der Waals epitaxy (qvdWE), heterogeneous integration, and wafer bonding — are addressed as key enablers for flexible substrate engineering. High-temperature superconductive materials grown by MOVPE-related techniques are also included. This issue aims to provide a comprehensive snapshot of the state of the art in MOVPE-based crystal growth and to serve as a lasting scientific record of ICMOVPE XXII. Contributions from both invited speakers and general conference attendees are welcome. Manuscript submission information: Manuscript submission open date: 20-Apr-2026 Manuscript submission deadline: 31-Aug-2026 You are invited to submit your manuscript at any time before the submission deadline. For any inquiries about the appropriateness of contribution topics, please contact Prof. Sang-Wan Ryu via [email protected]. Please refer to the Guide for Authors to prepare your manuscript, and select the article type of “VSI: 2026 ICMOVPE XXII” when submitting your manuscript online at the journal’s submission platform Editorial Manager®. Both the Guide for Authors and the submission portal could also be found on the Journal Homepage. Keywords: MOVPE, epitaxy, compound semiconductor, 2D materials https://www.sciencedirect.com/special-issue/332636/proceedings-of-icmovpe-xxii
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Special Issue on Proceedings of the 24th International Conference on Molecular Beam Epitaxy Día de Entrega: 2027-01-31 This special issue invites contributions celebrating the extraordinary career of Dr. Alfred Yi Cho and the unparalleled standards of scientific rigor, creativity, and integrity he established in molecular beam epitaxy (MBE). We welcome not only original research articles, but also reviews, perspectives, and short memoirs reflecting on the early invention and development of MBE at institutions such as Bell Labs, IBM, and beyond, as well as its transformative impact on devices including quantum cascade lasers and other heterostructure technologies. Beyond a technical collection, this issue aims to serve as a historical record of MBE’s evolution - capturing first-hand accounts, insights, and memories from pioneers of the field. As many of these contributors represent a senior generation of scientists, this special issue offers a timely opportunity to preserve their experiences and perspectives for future generations of researchers. Guest editors: Dr. Maria Hilse Department of Materials Science and Engineering & Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, United States of America (the) Dr. Alan Doolittle School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States of America (the) Special issue information: This special issue honors the extraordinary scientific legacy of Dr. Alfred Y. Cho, whose pioneering work established molecular beam epitaxy (MBE) as a foundational synthesis technique for modern semiconductor science and technology. The issue celebrates not only Dr. Cho’s transformative contributions, but also the culture of scientific rigor, creativity, precision, and integrity that shaped the early development of MBE. We invite submissions covering all aspects of MBE, from foundational studies to emerging materials and device applications. Contributions may include original research articles, reviews, perspectives, historical retrospectives, technical notes, and short memoirs or personal reflections documenting the development and impact of MBE. Topics of interest include, but are not limited to: Early history and development of MBE at Bell Labs, IBM, and other pioneering institutions​ Advances in MBE instrumentation, growth science, and surface/interface engineering Epitaxial growth of III-V, II-VI, IV-VI, oxide, nitride, magnetic, topological, and 2D materials Semiconductor heterostructures, quantum wells, superlattices, and quantum materials Device technologies enabled by MBE, including quantum cascade lasers, infrared detectors, spintronic devices, superconducting heterostructures, and quantum information platforms In situ characterization, process monitoring, automation, and AI-assisted epitaxy Hybrid epitaxy approaches and integration with complementary synthesis techniques Future directions and challenges for MBE in academia, national laboratories, and industry In addition to technical contributions, this issue strongly encourages historical perspectives and first-hand accounts from scientists who contributed to the early development of MBE. These contributions will help preserve the origins, scientific culture, and collaborative spirit that enabled many of the field’s foundational breakthroughs. As many pioneers of MBE represent a senior generation of researchers, this special issue provides a timely opportunity to document their experiences and perspectives for future generations. Through this collection, we aim to create both a high-impact technical issue and a lasting historical record of the evolution and impact of molecular beam epitaxy. Manuscript submission information: Manuscript submission open date: 12-Jul-2026 Manuscript submission deadline: 31-Jan-2027 You are invited to submit your manuscript at any time before the submission deadline. For any inquiries about the appropriateness of contribution topics, please contact Dr. Maria Hilse via [email protected]. Please refer to the Guide for Authors to prepare your manuscript, and select the article type of “VSI: Dr. Alfred Cho Tribute” when submitting your manuscript online at the journal’s submission platform Editorial Manager®. Both the Guide for Authors and the submission portal could also be found on the Journal Homepage. Keywords: Molecular Beam Epitaxy, ICMBE26 Proceedings, Growth and Characterization https://www.sciencedirect.com/special-issue/334380/proceedings-of-the-24th-international-conference-on-molecular-beam-epitaxy
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