Información de la Revista

Journal of Crystal Growth

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Factor de Impacto:
2.5
Editor:
Elsevier
ISSN:
0022-0248
Vistas:
808
Seguidores:
0
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Solicitud de Artículos

Journal of Crystal Growth is an academic journal published by Elsevier. (ISSN 0022-0248, impact factor 2.5).

Aims & Scope The Journal of Crystal Growth offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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Números especiales

Número especial sobre Proceedings of the 24th International Conference on Molecular Beam Epitaxy Día de Entrega: 2027-01-31 This special issue invites contributions celebrating the extraordinary career of Dr. Alfred Yi Cho and the unparalleled standards of scientific rigor, creativity, and integrity he established in molecular beam epitaxy (MBE). We welcome not only original research articles, but also reviews, perspectives, and short memoirs reflecting on the early invention and development of MBE at institutions such as Bell Labs, IBM, and beyond, as well as its transformative impact on devices including quantum cascade lasers and other heterostructure technologies. Beyond a technical collection, this issue aims to serve as a historical record of MBE’s evolution - capturing first-hand accounts, insights, and memories from pioneers of the field. As many of these contributors represent a senior generation of scientists, this special issue offers a timely opportunity to preserve their experiences and perspectives for future generations of researchers. Guest editors: Dr. Maria Hilse Department of Materials Science and Engineering & Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, United States of America (the) Dr. Alan Doolittle School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States of America (the) Special issue information: This special issue honors the extraordinary scientific legacy of Dr. Alfred Y. Cho, whose pioneering work established molecular beam epitaxy (MBE) as a foundational synthesis technique for modern semiconductor science and technology. The issue celebrates not only Dr. Cho’s transformative contributions, but also the culture of scientific rigor, creativity, precision, and integrity that shaped the early development of MBE. We invite submissions covering all aspects of MBE, from foundational studies to emerging materials and device applications. Contributions may include original research articles, reviews, perspectives, historical retrospectives, technical notes, and short memoirs or personal reflections documenting the development and impact of MBE. Topics of interest include, but are not limited to: Early history and development of MBE at Bell Labs, IBM, and other pioneering institutions​ Advances in MBE instrumentation, growth science, and surface/interface engineering Epitaxial growth of III-V, II-VI, IV-VI, oxide, nitride, magnetic, topological, and 2D materials Semiconductor heterostructures, quantum wells, superlattices, and quantum materials Device technologies enabled by MBE, including quantum cascade lasers, infrared detectors, spintronic devices, superconducting heterostructures, and quantum information platforms In situ characterization, process monitoring, automation, and AI-assisted epitaxy Hybrid epitaxy approaches and integration with complementary synthesis techniques Future directions and challenges for MBE in academia, national laboratories, and industry In addition to technical contributions, this issue strongly encourages historical perspectives and first-hand accounts from scientists who contributed to the early development of MBE. These contributions will help preserve the origins, scientific culture, and collaborative spirit that enabled many of the field’s foundational breakthroughs. As many pioneers of MBE represent a senior generation of researchers, this special issue provides a timely opportunity to document their experiences and perspectives for future generations. Through this collection, we aim to create both a high-impact technical issue and a lasting historical record of the evolution and impact of molecular beam epitaxy. Manuscript submission information: Manuscript submission open date: 12-Jul-2026 Manuscript submission deadline: 31-Jan-2027 You are invited to submit your manuscript at any time before the submission deadline. For any inquiries about the appropriateness of contribution topics, please contact Dr. Maria Hilse via [email protected]. Please refer to the Guide for Authors to prepare your manuscript, and select the article type of “VSI: Dr. Alfred Cho Tribute” when submitting your manuscript online at the journal’s submission platform Editorial Manager®. Both the Guide for Authors and the submission portal could also be found on the Journal Homepage. Keywords: Molecular Beam Epitaxy, ICMBE26 Proceedings, Growth and Characterization https://www.sciencedirect.com/special-issue/334380/proceedings-of-the-24th-international-conference-on-molecular-beam-epitaxy
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